preliminary data sheet FP4050 2-w att p ower phemt phone: (408) 988-1845 http:// www.filtronicsolidstate.com revised: 10/04/00 fax: (408) 970-9950 features 48 dbm ip3 at 2 ghz 34 dbm p-1db at 2 ghz 14 db power gain at 2 ghz description and applications the FP4050 is an aluminum gallium arsenide / indium gallium arsenide ( algaas/ ingaas) pseudomorphic high electron mobility transistor ( phemt), utilizing an electron-beam direct- write 0.50 um by 400 um schottky barrier gate. the recessed ?mushroom? gate structure minimizes parasitic gate-source and gate resistances. the FP4050 features si3n4 passivation. typical applications include commercial and military high-performance power amplifiers, including satcom uplink transmitters, pcs/cellular low-voltage high-efficiency output amplifiers, and medium-haul digital radio transmitters. this device is also suitable as a power stage for wlan and ism band spread spectrum applications. electrical specifications @ t ambient = 22 3 c parameter symbol test conditions min typ max units output power @ 1 db compression p 1db f = 2 ghz; v ds = 8v; i ds = 50% i dss 34 dbm power gain @ 1 db compression g 1db f = 2 ghz; v ds = 8v; i ds = 50% i dss 14 db saturated drain-source current i dss v ds = 2v; v gs = 0v 950 1100 1300 ma maximum drain-source current i max v ds = 2v; v gs = 1v 2200 ma transconductance g m v ds = 2 v; v gs = 0 v 880 ms pinch-off voltage v p v ds = 2 v; i ds = 10 ma -1.2 v gate-drain breakdown voltage magnitude |v bdgd | i gs = 20 ma 12 15 v gate-source breakdown voltage magnitude |v bdgs | i gs = 20 ma 12 15 v gate-source leakage current magnitude |i gsl | v gs = -5 v 0.2 ma thermal resistivity q jc 15 c/w drain bond pad source bond pad (2x) gate bond pad
preliminary data sheet FP4050 2-w att p ower phemt phone: (408) 988-1845 http:// www.filtronicsolidstate.com revised: 10/04/00 fax: (408) 970-9950 recommended continuous operating limits parameter symbol nominal units drain-source voltage v ds 8 v gate-source voltage v gs -1.0 v drain-source current i ds 500 ma rf input power p in 800 mw channel operating temperature t ch 150 c ambient temperature t stg -20/50 c note: device should be operated at or below recommended continuous operating limits for reliable performance. absolute ratings parameter symbol test conditions min max units drain-source voltage v ds t ambient = 22 3 c 10 v gate-source voltage v gs t ambient = 22 3 c -5 v drain-source current i ds t ambient = 22 3 c 800 ma gate current i g t ambient = 22 3 c 180 ma rf input power p in t ambient = 22 3 c tbd mw channel operating temperature t ch t ambient = 22 3 c 175 oc storage temperature t stg ? -65 175 oc note: even temporary operating conditions that exceed the absolute maximum ratings could result in permanent damage to the device. handling precautions to avoid damage to the devices care should be exercised during handling. proper electrostatic discharge (esd) precautions should be observed at all stages of storage, handling, assembly, and testing. these devices should be treated as class 1a (0-500 v). further information on esd control measures can be found in mil-std-1686 and mil-hdbk-263. all information and specifications are subject to change without notice.
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